描述
开 本: 16开纸 张: 胶版纸包 装: 平装是否套装: 否国际标准书号ISBN: 9787040421934
内容简介
本书是作者在微波和光通信领域多年工作、学习、研究和教学中获得的知识和经验的总结。主要内容包括微波信号网络矩阵技术、噪声网络矩阵技术以及以此为基础的微波射频异质结双极晶体管建模和测试技术；此外还包括微波射频异质结双极晶体管小信号等效电路模型、大信号非线性等效电路模型和噪声等效电路模型以及等效电路模型的参数提取技术等。
目 录
About the Author
Preface
Acknowledgments
Nomenclature
1 Introduction
1.1 Overview of Heterojunction Bipolar Transistors
1.2 Modeling and Measurement for HBT
1.3 Organization of This Book
References
2 Basic Concept of Microwave Device Modeling
2.1 Signal Parameters
2.1.1 Low-Frequency Parameters
2.1.2 S-Parameters
2.2 Representation of Noisy Two-Port Network
2.2.1 Noise Matrix
2.2.2 Noise Parameters
2.3 Basic Circuit Elements
2.3.1 Resistance
2.3.2 Capacitance
2.3.3 Inductance
2.3.4 Controlled Sources
2.3.5 Ideal Transmission Line
2.4 r- and T-Type Networks
2.4.1 T-Type Network
2.4.2 n-Type Network
2.4.3 Relationship between ~t- and T-Type Networks
2.5 Deembedding Method
2.5.1 Parallel Deembedding
2.5.2 Series Deembedding
2.5.3 Cascading Deembedding
2.6 Basic Methods of Parameter Extraction
2.6.1 Determination of Capacitance
2.6.2 Determination of Inductance
2.6.3 Determination of Resistance
2.7 Summary
References
3 Modeling and Parameter Extraction Methods of Bipolar Junction Transistor
3.1 PN Junction
3.2 PN Junction Diode
3.2.1 Basic Concept
3.2.2 Equivalent Circuit Model
3.2.3 Determination of Model Parameters
3.3 BJT Physical Operation
3.3.1 Device Structure
3.3.2 The Modes of Operation
3.3.3 Base-Width Modulation
3.3.4 High Injection and Current Crowding
3.4 Equivalent Circuit Model
3.4.1 E-M Model
3.4.2 G-P Model
3.4.3 Noise Model
3.5 Microwave Performance
3.5.1 Transition Frequency
3.5.2 Common-Emitter Configuration
3.5.3 Common-Base Configuration
3.5.4 Common-Collector Configuration
3.5.5 Summary and Comparisons
3.6 Summary
References
……
4 Basic Principle of HBT
5 Small-Signal Modeling and Parameter Extraction of HBT
6 Large-Signal Equivalent Circuit Modeling of HBT
7 Microwave Noise Modeling and Parameter Extraction Techniqre for HBT’s
8 SiGe HBT Modeling and Parameter Extraction
Index
Preface
Acknowledgments
Nomenclature
1 Introduction
1.1 Overview of Heterojunction Bipolar Transistors
1.2 Modeling and Measurement for HBT
1.3 Organization of This Book
References
2 Basic Concept of Microwave Device Modeling
2.1 Signal Parameters
2.1.1 Low-Frequency Parameters
2.1.2 S-Parameters
2.2 Representation of Noisy Two-Port Network
2.2.1 Noise Matrix
2.2.2 Noise Parameters
2.3 Basic Circuit Elements
2.3.1 Resistance
2.3.2 Capacitance
2.3.3 Inductance
2.3.4 Controlled Sources
2.3.5 Ideal Transmission Line
2.4 r- and T-Type Networks
2.4.1 T-Type Network
2.4.2 n-Type Network
2.4.3 Relationship between ~t- and T-Type Networks
2.5 Deembedding Method
2.5.1 Parallel Deembedding
2.5.2 Series Deembedding
2.5.3 Cascading Deembedding
2.6 Basic Methods of Parameter Extraction
2.6.1 Determination of Capacitance
2.6.2 Determination of Inductance
2.6.3 Determination of Resistance
2.7 Summary
References
3 Modeling and Parameter Extraction Methods of Bipolar Junction Transistor
3.1 PN Junction
3.2 PN Junction Diode
3.2.1 Basic Concept
3.2.2 Equivalent Circuit Model
3.2.3 Determination of Model Parameters
3.3 BJT Physical Operation
3.3.1 Device Structure
3.3.2 The Modes of Operation
3.3.3 Base-Width Modulation
3.3.4 High Injection and Current Crowding
3.4 Equivalent Circuit Model
3.4.1 E-M Model
3.4.2 G-P Model
3.4.3 Noise Model
3.5 Microwave Performance
3.5.1 Transition Frequency
3.5.2 Common-Emitter Configuration
3.5.3 Common-Base Configuration
3.5.4 Common-Collector Configuration
3.5.5 Summary and Comparisons
3.6 Summary
References
……
4 Basic Principle of HBT
5 Small-Signal Modeling and Parameter Extraction of HBT
6 Large-Signal Equivalent Circuit Modeling of HBT
7 Microwave Noise Modeling and Parameter Extraction Techniqre for HBT’s
8 SiGe HBT Modeling and Parameter Extraction
Index
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