描述
开 本: 16开纸 张: 胶版纸包 装: 平装是否套装: 否国际标准书号ISBN: 9787121248047
编辑推荐
国内多所院校采用；反映了纳米级别CMOS技术的广泛应用和技术的发展。
内容简介
全书详细讲述了CMOS数字集成电路的相关内容，为反映纳米级别CMOS技术的广泛应用和技术的发展， 全书在前版的基础上对晶体管模型公式和器件参数进行了修正，几乎全部章节都进行了重写，提供了反映现代 技术发展水平和电路设计的*资料。全书共15章。第1章至第8章详细讨论MOS晶体管的相关特性和工作原 理、基本反相器电路设计、组合逻辑电路及时序逻辑电路的结构与工作原理；第9章至第13章主要介绍应用于 先进VLSI芯片设计的动态逻辑电路、先进的半导体存储电路、低功耗CMOS逻辑电路、数字运算和转换电路、 芯片的I/O设计；第14章和第15章分别讨论电路的产品化设计和可测试性设计这两个重要问题。
目 录
Chapter 1 Introduction
概论
1.1 Historical Perspective
发展历史
1.2 Objective and Organization of the Book
本书的目标和结构
1.3 A Circuit Design Example
电路设计举例
1.4 Overview of VLSI Design Methodologies
VLSI 设计方法综述
1.5 VLSI Design Flow
VLSI 设计流程
1.6 Design Hierarchy
设计分层
1.7 Concepts of Regularity, Modularity, and Locality
规范化、模块化和本地化的概念
1.8 VLSI Design Styles
VLSI 的设计风格
1.9 Design Quality
设计质量
1.10 Packaging Technology
封装技术
1.11 Computer-Aided Design Technology
计算机辅助设计技术
Exercise Problems
习题
Chapter 2 Fabrication of MOSFETs
MOS 场效应管的制造
2.1 Introduction
概述
2.2 Fabrication Process Flow: Basic Steps
制造工艺的基本步骤
2.3 The CMOS n-Well Process
CMOS n 阱工艺 60
2.4 Evolution of CMOS Technology
CMOS 技术的发展 67
2.5 Layout Design Rules
版图设计规则 74
2.6 Full-Custom Mask Layout Design
全定制掩膜版图设计
Exercise Problems
习题
Chapter 3 MOS Transistor
MOS 晶体管
3.1 The Metal Oxide Semiconductor (MOS) Structure
金属-氧化物-半导体 (MOS) 结构
3.2 The MOS System Under External Bias
外部偏置下的 MOS 系统
3.3 Structure and Operation of the MOS Transistor (MOSFET)
MOS 场效应管 (MOSFET) 的结构和作用
3.4 MOSFET Current-Voltage Characteristics
MOSFET 的电流-电压特性
3.5 MOSFET Scaling and Small-Geometry Effects
MOSFET 的收缩和小尺寸效应
3.6 MOSFET Capacitances
MOSFET 电容
Exercise Problems
习题
Chapter 4 Modeling of MOS Transistors Using SPICE
用 SPICE 进行 MOS 管建模
4.1 Introduction
概述
4.2 Basic Concepts
基本概念 168
4.3 The Level 1 Model Equations
一级模型方程
4.4 The Level 2 Model Equations
二级模型方程
……
Chapter 5 MOS Inverters: Static Characteristics
MOS 反相器的静态特性
Chapter 6 MOS Inverters: Switching Characteristics and Interconnect Effects
MOS 反相器的开关特性和体效应
Chapter 7 Combinational MOS Logic Circuits
组合 MOS 逻辑电路
Chapter 8 Sequential MOS Logic Circuits
时序 MOS 逻辑电路
Chapter 9 Dynamic Logic Circuits
动态逻辑电路
Chapter 10 Semiconductor Memories
半导体存储器
Chapter 11 Low-Power CMOS Logic Circuits
低功耗 CMOS 逻辑电路
Chapter 12 Arithmetic Building Blocks
算术组合模块
Chapter 13 Clock and I/O Circuits
时钟电路与输入输出电路
Chapter 14 Design for Manufacturability
产品化设计
Chapter 15 Design for Testability
可测试性设计
References
参考文献
Index
索引
概论
1.1 Historical Perspective
发展历史
1.2 Objective and Organization of the Book
本书的目标和结构
1.3 A Circuit Design Example
电路设计举例
1.4 Overview of VLSI Design Methodologies
VLSI 设计方法综述
1.5 VLSI Design Flow
VLSI 设计流程
1.6 Design Hierarchy
设计分层
1.7 Concepts of Regularity, Modularity, and Locality
规范化、模块化和本地化的概念
1.8 VLSI Design Styles
VLSI 的设计风格
1.9 Design Quality
设计质量
1.10 Packaging Technology
封装技术
1.11 Computer-Aided Design Technology
计算机辅助设计技术
Exercise Problems
习题
Chapter 2 Fabrication of MOSFETs
MOS 场效应管的制造
2.1 Introduction
概述
2.2 Fabrication Process Flow: Basic Steps
制造工艺的基本步骤
2.3 The CMOS n-Well Process
CMOS n 阱工艺 60
2.4 Evolution of CMOS Technology
CMOS 技术的发展 67
2.5 Layout Design Rules
版图设计规则 74
2.6 Full-Custom Mask Layout Design
全定制掩膜版图设计
Exercise Problems
习题
Chapter 3 MOS Transistor
MOS 晶体管
3.1 The Metal Oxide Semiconductor (MOS) Structure
金属-氧化物-半导体 (MOS) 结构
3.2 The MOS System Under External Bias
外部偏置下的 MOS 系统
3.3 Structure and Operation of the MOS Transistor (MOSFET)
MOS 场效应管 (MOSFET) 的结构和作用
3.4 MOSFET Current-Voltage Characteristics
MOSFET 的电流-电压特性
3.5 MOSFET Scaling and Small-Geometry Effects
MOSFET 的收缩和小尺寸效应
3.6 MOSFET Capacitances
MOSFET 电容
Exercise Problems
习题
Chapter 4 Modeling of MOS Transistors Using SPICE
用 SPICE 进行 MOS 管建模
4.1 Introduction
概述
4.2 Basic Concepts
基本概念 168
4.3 The Level 1 Model Equations
一级模型方程
4.4 The Level 2 Model Equations
二级模型方程
……
Chapter 5 MOS Inverters: Static Characteristics
MOS 反相器的静态特性
Chapter 6 MOS Inverters: Switching Characteristics and Interconnect Effects
MOS 反相器的开关特性和体效应
Chapter 7 Combinational MOS Logic Circuits
组合 MOS 逻辑电路
Chapter 8 Sequential MOS Logic Circuits
时序 MOS 逻辑电路
Chapter 9 Dynamic Logic Circuits
动态逻辑电路
Chapter 10 Semiconductor Memories
半导体存储器
Chapter 11 Low-Power CMOS Logic Circuits
低功耗 CMOS 逻辑电路
Chapter 12 Arithmetic Building Blocks
算术组合模块
Chapter 13 Clock and I/O Circuits
时钟电路与输入输出电路
Chapter 14 Design for Manufacturability
产品化设计
Chapter 15 Design for Testability
可测试性设计
References
参考文献
Index
索引
在线试读
ABOUTTHEAUTHORS
Sung-Mo“Steve”KangreceivedhisPhDinelectricalengineeringfromtheUniversityofCalifornia,Berkeley.Hehasworkedonthedevelopmentoffull-customCMOSVLSIchips,includingtheworld’srst32-bitfullCMOSmicro-processorandperipheralchipsatAT＆TBellLaboratoriesinMurrayHill,NewJersey.HehastaughtdigitalintegratedcircuitsattheUniversityofIllinoisatUrbana-Champaign;theUniversityofCalifornia,SantaCruz;theUniversityofCalifornia,Merced;andtheKoreaAdvancedInstituteofScienceandTechnology(KAIST)inDaejeon,Korea.HehasalsogiveninvitedlecturesandtutorialsonCMOSdigitalcircuits,reliability,andcomputer-aideddesignofVLSIcircuitsandsystemsatmajorconferencesanduniversitiesglobally.
Dr.KangisafellowofIEEE,ACM,andAAASandhasreceivedmanyawards,includingtheIEEEMillenniumMedal,IEEEGraduateTeachingTechnicalFieldAward,IEEECASSocietyM.E.VanValkenburgAward,IEEECASSocietyTech-nicalExcellenceAward,SRCTechnicalExcellenceAward,andChang-LinTienEducationLeadershipAward.HehasservedasDepartmentHeadoftheUniversityofIllinoisatUrbana-Champaign;DeanofEngineeringattheUniversityofCalifornia,SantaCruz;ChancelloroftheUniversityofCalifornia,Merced;andPresidentofKAIST,Daejeon,Korea.
YusufLeblebicireceivedaPhDinelectricalandcomputerengineeringfromtheUniversityofIllinoisatUrbana-Champaign.Hehasbeenavisitingassistantprofes-sorofelectricalandcomputerengineeringattheUniversityofIllinoisatUrbana-Champaign,associateprofessorofelectricalandelectronicsengineeringatIstanbulTechnicalUniversity,andassociateprofessorofelectricalandcomputerengineeringatWorcesterPolytechnicInstitute.HealsoservedasthemicroelectronicsprogramcoordinatoratSabanciUniversity.Currently,heisafull(chair)professorattheSwissFederalInstituteofTechnologyinLausanne,Switzerland,anddirectoroftheMicroelectronicSystemsLaboratory.Hisresearchinterestsincludedesignofhigh-performanceCMOSdigitalandmixed-signalintegratedcircuits,computer-aideddesignofVLSIsystems,intelligentsensorinterfaces,modelingandsimulationofsemiconductordevices,andVLSIreliabilityanalysis.HeisafellowofIEEEandre-cipientoftheNATOScienceFellowshipAward,theYoungScientistAwardoftheTurkishScienticandTechnologicalResearchCouncil,andtheJosephSamuelSatinDistinguishedFellowAwardoftheWorcesterPolytechnicInstitute.HewaselectedasDistinguishedLectureroftheIEEECircuitsandSystemsSocietyfor2010–2011.
ChulwooKimreceivedBSandMSdegreesinelectronicsengineeringfromKoreaUniversity,andaPhDinelectricalandcomputerengineeringfromtheUni-versityofIllinoisatUrbana-Champaign.In1999,heworkedasasummerinternatDesignTechnologyatIntelCorporation,SantaClara,California.InMay2001,hejoinedIBMMicroelectronicsDivisioninAustin,Texas,wherehewasinvolvedincellprocessordesign.SinceSeptember2002,hehasbeenwiththeDepartmentofElec-tronicsandComputerEngineeringatKoreaUniversity,whereheiscurrentlyapro-fessor.HewasavisitingprofessorattheUniversityofCalifornia,LosAngelesandattheUniversityofCalifornia,SantaCruz.Hiscurrentresearchinterestsareintheareasofwirelinetransceiver,memory,powermanagement,anddataconverters.
Dr.KimreceivedtheSamsungHumanTechThesisContestBronzeAward,theISLPEDLow-PowerDesignContestAward,theDACStudentDesignContestAward,theSRCInventorRecognitionAward,theYoungScientistAwardfromtheMinistryofScienceandTechnologyofKorea,theSeoktopAwardforexcellenceinteaching,andtheASP-DACBestDesignAward.HeiscurrentlyontheeditorialboardofIEEETransactionsonVLSISystemsandontheTechnicalProgramCom-mitteeoftheIEEEInternationalSolid-StateCircuitsConference.
作者简介
Sung-Mo(Steve)Kang（康松默）于美国加州大学伯克利分校电机工程系取得博士学位，主要研究全定制CMOSVLSI芯片的
Sung-Mo“Steve”KangreceivedhisPhDinelectricalengineeringfromtheUniversityofCalifornia,Berkeley.Hehasworkedonthedevelopmentoffull-customCMOSVLSIchips,includingtheworld’srst32-bitfullCMOSmicro-processorandperipheralchipsatAT＆TBellLaboratoriesinMurrayHill,NewJersey.HehastaughtdigitalintegratedcircuitsattheUniversityofIllinoisatUrbana-Champaign;theUniversityofCalifornia,SantaCruz;theUniversityofCalifornia,Merced;andtheKoreaAdvancedInstituteofScienceandTechnology(KAIST)inDaejeon,Korea.HehasalsogiveninvitedlecturesandtutorialsonCMOSdigitalcircuits,reliability,andcomputer-aideddesignofVLSIcircuitsandsystemsatmajorconferencesanduniversitiesglobally.
Dr.KangisafellowofIEEE,ACM,andAAASandhasreceivedmanyawards,includingtheIEEEMillenniumMedal,IEEEGraduateTeachingTechnicalFieldAward,IEEECASSocietyM.E.VanValkenburgAward,IEEECASSocietyTech-nicalExcellenceAward,SRCTechnicalExcellenceAward,andChang-LinTienEducationLeadershipAward.HehasservedasDepartmentHeadoftheUniversityofIllinoisatUrbana-Champaign;DeanofEngineeringattheUniversityofCalifornia,SantaCruz;ChancelloroftheUniversityofCalifornia,Merced;andPresidentofKAIST,Daejeon,Korea.
YusufLeblebicireceivedaPhDinelectricalandcomputerengineeringfromtheUniversityofIllinoisatUrbana-Champaign.Hehasbeenavisitingassistantprofes-sorofelectricalandcomputerengineeringattheUniversityofIllinoisatUrbana-Champaign,associateprofessorofelectricalandelectronicsengineeringatIstanbulTechnicalUniversity,andassociateprofessorofelectricalandcomputerengineeringatWorcesterPolytechnicInstitute.HealsoservedasthemicroelectronicsprogramcoordinatoratSabanciUniversity.Currently,heisafull(chair)professorattheSwissFederalInstituteofTechnologyinLausanne,Switzerland,anddirectoroftheMicroelectronicSystemsLaboratory.Hisresearchinterestsincludedesignofhigh-performanceCMOSdigitalandmixed-signalintegratedcircuits,computer-aideddesignofVLSIsystems,intelligentsensorinterfaces,modelingandsimulationofsemiconductordevices,andVLSIreliabilityanalysis.HeisafellowofIEEEandre-cipientoftheNATOScienceFellowshipAward,theYoungScientistAwardoftheTurkishScienticandTechnologicalResearchCouncil,andtheJosephSamuelSatinDistinguishedFellowAwardoftheWorcesterPolytechnicInstitute.HewaselectedasDistinguishedLectureroftheIEEECircuitsandSystemsSocietyfor2010–2011.
ChulwooKimreceivedBSandMSdegreesinelectronicsengineeringfromKoreaUniversity,andaPhDinelectricalandcomputerengineeringfromtheUni-versityofIllinoisatUrbana-Champaign.In1999,heworkedasasummerinternatDesignTechnologyatIntelCorporation,SantaClara,California.InMay2001,hejoinedIBMMicroelectronicsDivisioninAustin,Texas,wherehewasinvolvedincellprocessordesign.SinceSeptember2002,hehasbeenwiththeDepartmentofElec-tronicsandComputerEngineeringatKoreaUniversity,whereheiscurrentlyapro-fessor.HewasavisitingprofessorattheUniversityofCalifornia,LosAngelesandattheUniversityofCalifornia,SantaCruz.Hiscurrentresearchinterestsareintheareasofwirelinetransceiver,memory,powermanagement,anddataconverters.
Dr.KimreceivedtheSamsungHumanTechThesisContestBronzeAward,theISLPEDLow-PowerDesignContestAward,theDACStudentDesignContestAward,theSRCInventorRecognitionAward,theYoungScientistAwardfromtheMinistryofScienceandTechnologyofKorea,theSeoktopAwardforexcellenceinteaching,andtheASP-DACBestDesignAward.HeiscurrentlyontheeditorialboardofIEEETransactionsonVLSISystemsandontheTechnicalProgramCom-mitteeoftheIEEEInternationalSolid-StateCircuitsConference.
作者简介
Sung-Mo(Steve)Kang（康松默）于美国加州大学伯克利分校电机工程系取得博士学位，主要研究全定制CMOSVLSI芯片的
……
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