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开 本: 32开纸 张: 胶版纸包 装: 平装是否套装: 否国际标准书号ISBN: 9787030393302
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《硅通孔3D集成技术=Through Silicon Vias for 3D Integration:导读版：英文》适合从事电子、光电子、MEMS等器件三维集成研究工作的工程师、技术研发人员、技术管理人员和科研人员阅读，也可以作为相关专业大学高年级本科生和研究生的教材。
内容简介
《信息科学技术学术著作丛书：硅通孔3D集成技术》系统讨论用于电子、光电子和MEMS器件的三维集成硅通孔（TSV）技术的*进展和未来可能的演变趋势，同时详尽讨论三维集成关键技术中存在的主要工艺问题和可能的解决方案。通过介绍半导体工业中的纳米技术和三维集成技术的起源和演变历史，结合当前三维集成关键技术的发展重点讨论TSV制程技术、晶圆减薄与薄晶圆在封装组装过程中的拿持技术、三维堆叠的微凸点制作与组装技术、芯片／芯片键合技术、芯片／晶圆键合技术、晶圆／晶圆键合技术、三维器件集成的热管理技术以及三维集成中的可靠性等关键技术问题，后讨论可实现产业化规模量产的三维封装技术以及TSV技术的未来发展趋势。
《信息科学技术学术著作丛书：硅通孔3D集成技术》适合从事电子、光电子、MEMS等器件三维集成研究工作的工程师、技术研发人员、技术管理人员和科研人员阅读，也可以作为相关专业大学高年级本科生和研究生的教材。
《信息科学技术学术著作丛书：硅通孔3D集成技术》适合从事电子、光电子、MEMS等器件三维集成研究工作的工程师、技术研发人员、技术管理人员和科研人员阅读，也可以作为相关专业大学高年级本科生和研究生的教材。
目 录
序
前言
致谢
导读
第1章 半导体工业的纳米技术和三维（3D）集成技术
1.1 引言
1.2 纳米技术
1.2.1 纳米技术起源
1.2.2 纳米技术重要的里程碑
1.2.3 石墨烯与电子工业
1.2.4 纳米技术的展望
1.2.5 摩尔定律：电子工业的纳米技术
1.3 三维集成技术
1.3.1 硅通孔（TSV）技术
1.3.2 三维集成技术的起源
1.4 三维硅集成技术的挑战和展望
1.4.1 三维硅集成技术
1.4.2 三维硅集成键合组装技术
1.4.3 三维硅集成技术面临的挑战
1.4.4 三维硅集成技术的展望
1.5 三维集成电路（3DIC）集成技术的潜在应用和挑战
1.5.1 3DIC集成技术的定义
1.5.2 移动电子产品的未来需求
1.5.3 带宽和wideI／O的定义
1.5.4 储存器的带宽
1.5.5 存储器芯片堆叠
1.5.6 wideI／O存储器
1.5.7 wideI／O动态随机存储器（DRAM）
1.5.8 wideI／O接口
1.5.9 2.5 D和3DIC集成（有源和无源转接板）技术
1.6 2.5 DIC进展（转接板）技术的进展
1.6.1 用作中间基板的转接板
1.6.2 用作应力释放（可靠性）缓冲层的转接板
1.6.3 用作载板的转接板
1.6.4 用作热管理的转接板
1.7 三维集成TSV无源转接板技术发展的新趋势
1.7.1 双面贴装空腔式转接板技术
1.7.2 有机基板开孔式转接板技术
1.7.3 设计案例
1.7.4 带有热塞或散热器的有机基板开孔式转接板技术
1.7.5 超低成本转接板技术
1.7.6 用于热管理的转接板技术
1.7.7 对于三维光发射二极管（LED）和SiP有埋入式微流道的转接板
1.8 埋人式3DIC集成
1.8.1 带应力释放间隙的半埋入式转接板
1.8.2 用于光电互连的埋入式三维混合IC集成技术
1.9 总结与建议
1.10 TSV专利
1.11 参考文献
1.12 其他阅读材料
1.12.1 TSV、3D集成和可靠性
1.12.2 3DMEMS和IC集成
1.12.3 半导体IC封装
第2章 硅通扎（TSV）技术
2.1 引言
2.2 TSV的发明
2.3 可采用TSV技术的量产产品
2.4 TSV孔的制作
2.4.1 DRIE与激光钻孔
2.4.2 制作椎形孔的DRIE工艺
……
第3章 硅通孔（BV）：机械、热和电学行为
第4章 薄晶圆强度测量
第5章 薄晶圆拿持技术
第6章 微凸点制作、组装和可靠性
第7章 微凸点的电迁移
第8章 瞬态液相键合：芯片到芯片（C2C），芯片到晶圆（C2W），晶圆到晶圆（W2W）
第9章 三维集成电路集成的热管理
第10章 三维集成电路封装
第11章 三维集成的发展趋势
索引
前言
致谢
导读
第1章 半导体工业的纳米技术和三维（3D）集成技术
1.1 引言
1.2 纳米技术
1.2.1 纳米技术起源
1.2.2 纳米技术重要的里程碑
1.2.3 石墨烯与电子工业
1.2.4 纳米技术的展望
1.2.5 摩尔定律：电子工业的纳米技术
1.3 三维集成技术
1.3.1 硅通孔（TSV）技术
1.3.2 三维集成技术的起源
1.4 三维硅集成技术的挑战和展望
1.4.1 三维硅集成技术
1.4.2 三维硅集成键合组装技术
1.4.3 三维硅集成技术面临的挑战
1.4.4 三维硅集成技术的展望
1.5 三维集成电路（3DIC）集成技术的潜在应用和挑战
1.5.1 3DIC集成技术的定义
1.5.2 移动电子产品的未来需求
1.5.3 带宽和wideI／O的定义
1.5.4 储存器的带宽
1.5.5 存储器芯片堆叠
1.5.6 wideI／O存储器
1.5.7 wideI／O动态随机存储器（DRAM）
1.5.8 wideI／O接口
1.5.9 2.5 D和3DIC集成（有源和无源转接板）技术
1.6 2.5 DIC进展（转接板）技术的进展
1.6.1 用作中间基板的转接板
1.6.2 用作应力释放（可靠性）缓冲层的转接板
1.6.3 用作载板的转接板
1.6.4 用作热管理的转接板
1.7 三维集成TSV无源转接板技术发展的新趋势
1.7.1 双面贴装空腔式转接板技术
1.7.2 有机基板开孔式转接板技术
1.7.3 设计案例
1.7.4 带有热塞或散热器的有机基板开孔式转接板技术
1.7.5 超低成本转接板技术
1.7.6 用于热管理的转接板技术
1.7.7 对于三维光发射二极管（LED）和SiP有埋入式微流道的转接板
1.8 埋人式3DIC集成
1.8.1 带应力释放间隙的半埋入式转接板
1.8.2 用于光电互连的埋入式三维混合IC集成技术
1.9 总结与建议
1.10 TSV专利
1.11 参考文献
1.12 其他阅读材料
1.12.1 TSV、3D集成和可靠性
1.12.2 3DMEMS和IC集成
1.12.3 半导体IC封装
第2章 硅通扎（TSV）技术
2.1 引言
2.2 TSV的发明
2.3 可采用TSV技术的量产产品
2.4 TSV孔的制作
2.4.1 DRIE与激光钻孔
2.4.2 制作椎形孔的DRIE工艺
……
第3章 硅通孔（BV）：机械、热和电学行为
第4章 薄晶圆强度测量
第5章 薄晶圆拿持技术
第6章 微凸点制作、组装和可靠性
第7章 微凸点的电迁移
第8章 瞬态液相键合：芯片到芯片（C2C），芯片到晶圆（C2W），晶圆到晶圆（W2W）
第9章 三维集成电路集成的热管理
第10章 三维集成电路封装
第11章 三维集成的发展趋势
索引
前 言
媒体评论
在线试读
CHAPTER 1
Nanotechnology and3D Integration for theSemiconductor Industry
1.1 Introduction
Some important milestones of nanotechnology will be mentionedbriefly in this chapter， and emphasis will be placed on the applicationsand outlook of nanotechnology in electronics. “ComputingMachines in the Future” was the title of the Nishina Memorial Lectureat Gakushuin University in Tokyo given by the 1965 Nobel PhysicsLaureate， Richard Feynman， on August 9， 1985. During the lecture，Feynman not only told us to go for three-dimensional (3D) integration，but he also taught us how to do it! Three-dimensional integrationwill be the focus of this book， and emphasis will be placed on 3Dintegrated circuit (IC) integration and recent advances and newtrends. 3D silicon (Si) integration will be discussed briefly.
1.2 Nanotechnology
1.2.1 Origin of Nanotechnology
On the evening of December 29， 1959， Richard Feynman gave a lectureentitled， “There’s Plenty of Room at the Bottom，” to theAmerican Physical Society at Caltech. His lecture is generally consideredto be the very first speech about nanotechnology， eventhough Professor Norio Taniguchi of the University of Tokyo coinedthe term nanotechnology in his paper， “On the Basic Concept of Nano-Technology，” published in the Proceedings of the International Conferenceon Production Engineering in 1974. In that paper， Taniguchidefined nanotechnology for fabrication methods below 1 mm todescribe semiconductor processes such as thin-film deposition and ion-beam milling that exhibited characteristic control on the order ofa nanometer. However， today the industry defines nanotechnologyas ≤0.1 mm， or 100 nm.
1.2.2 Important Milestones of Nanotechnology
Feynman was amazingly prophetic， and his insights were reallypretty visionary. Basically， in his 1959 speech he told us to makethings “small and smaller，” as suggested in Moore’s law， proposedby Gordon Moore in 1965 [1]. (Both of them are from Caltech， whereFeynman was a professor and Moore earned a Ph.D. degree.) Amongmany visionary things， Feynman said the following in his 1959 speech:“What would happen if we could arrange the atoms one by one theway we want them?” Since then， many scientists around the worldhave been doing exactly that， and some significant results are listedin the following.
1. 1974: First molecular electronic device patent.
2. 1981: IBM invented the scanning probe microscope (SPM) to measure and identify structures on the nanoscale. The SPM has the ability to move individual atoms and molecules on a surface. (Fig. 1.1a).
3. 1985: Curl， Kroto， and Smalley discovered buckyballs (1996 Nobel Prize in Chemistry)—stable molecules that contain 50 to 500 carbon atoms in a ball—using laser vaporized carbon(Fig. 1.1b).
4. 1989: IBM Almaden Research Center wrote IBM with 35 xenon atoms.
5. 1991: Discovery of carbon nanotubes (CNTs) by Sumio Iijima at the NEC Research Labs (Fig. 1.1c).
6. 2004: Intel launched the Pentium IV PRESCOFT processorbased on 90-nm process technology. Even this is not arrangingany atoms， but it is a very important milestone of Moore’slaw (the first high-volume product) by nanotechnology in theelectronics industry!
7. 2004: Geim and Novoselov (2010 Nobel Prize in Physics) discovereda simple and stable method for isolating singleatomic layers of graphite， known as graphene (Fig. 1.1d).
1.2.3 Why Graphene Is So Exciting and Could Be Very Important for the Electronics Industry
? Andre Geim and Konstantin Novoselov (at the University of Manchester) discovered how to make stable graphene， a honeycomb sheet of carbon atoms just one atom thick， and published their results in the journal Science 306， 666–669，October 2004.
? Since then， more than 4000 research papers have cited their paper.
? Since then， more than 2000 papers with graphene in the titlehave appeared in Physical Review Letters， the world’s mostprestigious physics journal (only 20 before 2004).
? In 6 years， Geim and Novoselov won the Nobel Prize for Physics (October 2010).
? Graphene (which is stronger than steel， more electrically conductivethan copper， and able to transmit electrical signalswith amazing rapidity) could be a candidate for the materialto make faster and more powerful electronics. Sure there are challenges and issues to bring it into high-volume production，but fortunately， carbon-based electronics is an active area ofresearch at， for example， IBM， Samsung， and other electronicdevice manufacturers.
? Already more than 500 papers about graphene-based electronics have appeared in Applied Physics Letters.
1.2.4 Outlook of Nanotechnology
As mentioned in his National Science Foundation (NSF) report in2006， “Nano Hype: The Truth Behind the Nanotechnology，” DavidBerube told us to stop all the hype; otherwise， the “nano-bubble” iscoming. The industry needs to develop and commercialize a fewhigh-volume killer nanotechnology products! For the electronicsindustry， graphene-based substrate could be one! For example， Samsungis planning to use it to make
Nanotechnology and3D Integration for theSemiconductor Industry
1.1 Introduction
Some important milestones of nanotechnology will be mentionedbriefly in this chapter， and emphasis will be placed on the applicationsand outlook of nanotechnology in electronics. “ComputingMachines in the Future” was the title of the Nishina Memorial Lectureat Gakushuin University in Tokyo given by the 1965 Nobel PhysicsLaureate， Richard Feynman， on August 9， 1985. During the lecture，Feynman not only told us to go for three-dimensional (3D) integration，but he also taught us how to do it! Three-dimensional integrationwill be the focus of this book， and emphasis will be placed on 3Dintegrated circuit (IC) integration and recent advances and newtrends. 3D silicon (Si) integration will be discussed briefly.
1.2 Nanotechnology
1.2.1 Origin of Nanotechnology
On the evening of December 29， 1959， Richard Feynman gave a lectureentitled， “There’s Plenty of Room at the Bottom，” to theAmerican Physical Society at Caltech. His lecture is generally consideredto be the very first speech about nanotechnology， eventhough Professor Norio Taniguchi of the University of Tokyo coinedthe term nanotechnology in his paper， “On the Basic Concept of Nano-Technology，” published in the Proceedings of the International Conferenceon Production Engineering in 1974. In that paper， Taniguchidefined nanotechnology for fabrication methods below 1 mm todescribe semiconductor processes such as thin-film deposition and ion-beam milling that exhibited characteristic control on the order ofa nanometer. However， today the industry defines nanotechnologyas ≤0.1 mm， or 100 nm.
1.2.2 Important Milestones of Nanotechnology
Feynman was amazingly prophetic， and his insights were reallypretty visionary. Basically， in his 1959 speech he told us to makethings “small and smaller，” as suggested in Moore’s law， proposedby Gordon Moore in 1965 [1]. (Both of them are from Caltech， whereFeynman was a professor and Moore earned a Ph.D. degree.) Amongmany visionary things， Feynman said the following in his 1959 speech:“What would happen if we could arrange the atoms one by one theway we want them?” Since then， many scientists around the worldhave been doing exactly that， and some significant results are listedin the following.
1. 1974: First molecular electronic device patent.
2. 1981: IBM invented the scanning probe microscope (SPM) to measure and identify structures on the nanoscale. The SPM has the ability to move individual atoms and molecules on a surface. (Fig. 1.1a).
3. 1985: Curl， Kroto， and Smalley discovered buckyballs (1996 Nobel Prize in Chemistry)—stable molecules that contain 50 to 500 carbon atoms in a ball—using laser vaporized carbon(Fig. 1.1b).
4. 1989: IBM Almaden Research Center wrote IBM with 35 xenon atoms.
5. 1991: Discovery of carbon nanotubes (CNTs) by Sumio Iijima at the NEC Research Labs (Fig. 1.1c).
6. 2004: Intel launched the Pentium IV PRESCOFT processorbased on 90-nm process technology. Even this is not arrangingany atoms， but it is a very important milestone of Moore’slaw (the first high-volume product) by nanotechnology in theelectronics industry!
7. 2004: Geim and Novoselov (2010 Nobel Prize in Physics) discovereda simple and stable method for isolating singleatomic layers of graphite， known as graphene (Fig. 1.1d).
1.2.3 Why Graphene Is So Exciting and Could Be Very Important for the Electronics Industry
? Andre Geim and Konstantin Novoselov (at the University of Manchester) discovered how to make stable graphene， a honeycomb sheet of carbon atoms just one atom thick， and published their results in the journal Science 306， 666–669，October 2004.
? Since then， more than 4000 research papers have cited their paper.
? Since then， more than 2000 papers with graphene in the titlehave appeared in Physical Review Letters， the world’s mostprestigious physics journal (only 20 before 2004).
? In 6 years， Geim and Novoselov won the Nobel Prize for Physics (October 2010).
? Graphene (which is stronger than steel， more electrically conductivethan copper， and able to transmit electrical signalswith amazing rapidity) could be a candidate for the materialto make faster and more powerful electronics. Sure there are challenges and issues to bring it into high-volume production，but fortunately， carbon-based electronics is an active area ofresearch at， for example， IBM， Samsung， and other electronicdevice manufacturers.
? Already more than 500 papers about graphene-based electronics have appeared in Applied Physics Letters.
1.2.4 Outlook of Nanotechnology
As mentioned in his National Science Foundation (NSF) report in2006， “Nano Hype: The Truth Behind the Nanotechnology，” DavidBerube told us to stop all the hype; otherwise， the “nano-bubble” iscoming. The industry needs to develop and commercialize a fewhigh-volume killer nanotechnology products! For the electronicsindustry， graphene-based substrate could be one! For example， Samsungis planning to use it to make
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