多层膜集成结构体声波谐振器（英文版）

　　Multilayer Integrated Film Bulk Acoustic Resonators mainly
introduces the theory， design， fabrication technology and
application of a recently devel-oped new type of device， multilayer
integrated film bulk acoustic resona-tors， at the micro and nano
scale involving microelectronic devices， integrated arcuits，
optical devices， sensors and actuators， acoustic resona-tors，
micro-nano manufacturing， multilayer integration， device theory and
design prinaples， etc. These devices can work at very high
frequencies by using the newly developed theory， design， and
fabrication technology ofnano and micro devices.
　　Readers in fields ofIC， electronic devices， sensors， materials，
and films etc. will benefit from this book by learning the detailed
fundamentals and potential applications of these advanced
devices.
　　Prof. Yafei Zhang　is the director of the Ministry of Education’s
Key Labora-tory for Tlhin Films and Microfabrication Technology，
PRC; Dr. Da Chenwas a PhD student in Prof. Yafei Zhang’s research
group.

Chapter1 Introduction
1.1 RF Filters in GHz Wireless Applications
1.1.1 The Requirement of RF Filters
1.1.2 Types ofRF Filters .
1.2 Bulk Acoustic Wave （BAW） Resonator and Its Development
1.2. BAW Resonator
1.2.2 Micro Electromechanical Systems （MEMS） Applied in BAW
1.3 The Principle and Configurations ofFBAR
1.3.1 The Principle of FBAR
1.3.2 Typical FBAR Configurations
1.3.3 Current Status of FBAR Filters
1.4 The Application of FBAR in Mass Loading Sensors
1.4.1 Acoustic Resonant Mass Sensors
1.4.2 FBAR Mass Loading Sensors
1.5 Overview of the Chapters
References

Chapter2 Propagation of Acoustic Wave in Crystals
2.1 The Equation ofAcoustic Plane Wave
2.1.1 The Equation of Elastic Deformation
2.1.2 Christoffel Equation
2.2 Propagation of Plane Wave in Isotropic Medium
2.3 Propagation of Plane Wave in Anisotropic Medium
2.3.1 Dispersion Relation and Inverse Velocity Face
2.3.2 The Solution of Wave Equation in Cubic Crystal
2.4 Piezoelectrically Active Wave Propagation
2.5 The Plane Wave Propagating in Piezoelectric Hexagonal
Crystal
References

Chapter 3 The Theory of FBAR
3.1 The Electric Impedance of the Ideal FBAR
3.1.1 The Analytic Expression of the Electric Impedance
3.1.2 The Resonance of FBAR
3.2 The Electric Impedance of the Compound FBAR
3.2.1 The Definition of the Acoustic Impedance
3.2.2 The Boundary Condition of Compound FBAR
3.3 The Loss and Performances of FBAR
3.4 The Equivalent Electromechanical Mode of FBAR
3.4.1 The Equivalent Mode of the Layers
3.4.2 The Universal Equivalent Mode of FBAR
3.4.3 The Equivalent Circuit Nears the Resonance of FBAR
3.5 The Calculated Influence of the Materials and Structure on the
Device Performance
3.5.1 The Effects of the Electrode……
3.5.2 The Influences of’ Supporting Layer and the Residue Silicon
Layer
References

Chapter 4 The Deposition and Etching of AIN Film
4.1 Deposition of AIN Film by RF Magnetron Sputtering
4.1.1 Introduction
4.1.2 Experimental
4.1.3 The Effect of RF Power on the Film Texture
4.1.4 The Influence of Ambit Pressure and the Ratio of N2/Ar on the
Film Structure
4.1.5 The Influence of the Substrate Temperature on the Film
Texture
4.1.6 The Microstructure and Chemical Component
4.2 The Scructural Characreristics of AIN Films Deposited on
Diff’erent Eleccrodes
4.3 Dry Etching of AIN Films Using Fluoride Plasma
4.3.1 The Dry Etching of AIN Films..
4.3.2 Experimental
4.3.3 The Etching Rate
4.3.4 The Morphologies
4.3.5 The Etching Mechanism.
4.4 The Wet Etching of AIN
4.4.1 The Wet Etching Process
4.4.2 Experimental
4.4.3 The Influence of the Film Texture
4.4.4 The Effects of Crystal Quality
References

Chapter 5 The FBAR with Membrane Structure
Chapter 6 Solidly Mounted Acoustic Resonator
Chapter 7 The Applications of FBAR in RF Filters
Chapter 8 The FBAR Excited by Lateral Filed
Chapter 9 High Sensitive Sensors Based on FBAR
Index